Monte Carlo Simulation Study on the Generation of Secondary Electrons in Scanning Electron Microscopy 扫描电子显微学中二次电子产生的MonteCarlo模拟
Methods for suppressing secondary electrons in neutron tubes are discussed. 讨论密封式中子管中抑制二次电子的几种方法。
Simulation for Suppressing of Secondary Electrons in Neutron Generator 中子发生器中二次电子抑制的数值模拟
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization. 一个高反向偏置电压产生一个强有力的内部电场,加速了通过硅晶格的电子,并通过碰撞电离产生二次电子。
Study on the Secondary Gap of the π Electrons of Single Wall Carbon Nanotubes 单壁碳纳米管π电子次级能隙的研究
Various ionizing radiations transfer their energy to biological media by producing secondary electrons. 电离辐射通过它们产生的次级电子将能量传递给生物介质。
When primary electrons hit the surface of the chunnel, secondary electrons are generated, which make the electron distribution at the exit hole of the chunnel more uniform. 当初始电子碰撞绝缘壁时,会产生二次电子,而二次电子能改善电子在通道出口处的电子能量分布的均匀性。
Improvement of the secondary-electrons restrain electrode. 通过隔离外界干扰电信号,精确控制扫描面积和对二次电子抑制电极的改进使剂量测量误差达到了实验要求。
The results show that no matter the range of the implanted ion itself or secondary effect sphere of secondary electrons, radical diffusion, thermal spike, cascade atoms and shock wave etc. 结果表明:无论是注入离子本身的射程,还是次级电子、自由基扩散、高温热穗、级联原子和冲击波等次级作用范围都无法触及表皮下面的胚细胞。
Using the Monte Carlo method and considering the space charging effect, we simulate the production and the transmission of the secondary electrons in FEDs, and the collision among particles. 利用MonteCarlo方法,模拟场致发射器件中二次电子的产生、运动过程。在模拟的过程中,同时考虑了空间电荷积累效应,二次电子发射和背散射过程。
Discusses the mechanism that the ion beam, as projectile, induces the secondary electrons and the secondary ions on the surface of the specimens. 本文论述了离子束射入样品材料表面诱导产生次级电子及次级离子的机理。
Monte Carlo simulation and computation of the excitation process of secondary electrons 次级电子激发过程的MonteCarlo模拟计算
Secondary Electrons in the X-Ray Tubes X射线管的次级电子
In the measurement, sample is finely purified, proper inletting and measuring sequence is used, "Quasi-memory effect" produced by secondary electrons and tail of main peak is decreased. 在测量中认真净化样品,采用合适的进样与测量程序,并减小由大峰拖尾和二次电子造成的似记忆效应。
The Mechanism of the Secondary Electrons and the Secondary Ions Induced by Ion Beam on the Material Surface 材料表面离子诱导次级电子与离子的机理
Trajectories and Return Properties of Secondary Electrons Emitted from an Insulator Film Positively Charged 正带电绝缘膜发射的二次电子的轨迹与返回特性
In this paper, the scattering of incident electrons, generation mechanisms of secondary electrons and the threshold energy effect of escaped low energy electrons are reviewed. 本文综述入射电子在样品中的散射、二次电子的产生机制和低能电子逸出的能量阈值效应。
It is suggested that, the deeper electron traps can restrain the emission of internal secondary electrons inside the surface layer of material, and the surface flashover voltage is possible to be promoted by enhancing the density of deeper traps. 复合材料中的深陷阱对于抑制材料表面的内二次电子发射有一定的作用,通过提高深陷阱的密度可以在一定程度上提高沿面闪络电压。
The research on position distribution of secondary electrons along proton track in tissue equivalent material 组织等效介质中质子产生的次级电子沿其径迹径向空间分布的研究
Local Field of Surface and Redistribution Properties of Secondary Electrons Emitted from Insulating Thin Film with Negative Charge 绝缘膜负带电时的表面局部电场与二次电子返回特性
The ionization of gas molecules by secondary electrons; 二次电子的电离作用;
Multifractal Characteristics of Surface Distribution of Secondary Electrons 出射二次电子表面分布的多重分形谱
In chapter 2, the principles of MDC for TWTs, refocusing and the influence of the secondary electrons are analyzed. The electron energy entering the collector is analyzed. 第二章从分析互作用后电子能量分布入手,分析多级降压收集极的工作原理、再聚焦原理和次级电子的影响。
Studies of Energy Resolution of Electron Spectroscopy and Channeltron Characteristics Using Elastic Secondary Electrons 用弹性电子测量能谱仪能量分辨率和电子倍增器的工作曲线
Suppressing Secondary Electrons in Neutron Tubes by Means of a Permanent Magnet 利用永久磁场抑制中子管中的电子电流
The theory of SEEA is based on the insulator's surface emitted secondary electrons when bombarded by electron, includes the process of electron-simulated desorption ( ESD), the process of desorption gas ionization and the process of the ion influencing the flashover. SEEA理论以绝缘子表面在电子轰击下发射二次电子为基础,包含了电子诱发脱附(ESD),和脱附气体离子化并对闪络过程产生影响等过程,对表面闪络现象进行了解释。
Impact ionization is an important process in radiation damage of biological. The secondary electrons caused by the impact ionization process are the main reason which can lead to DNA double stand breaks ( DSBs) of cancer cells. 碰撞电离是辐射导致生物学损伤的重要过程,其中产生的次级电子是癌细胞DNA双链断裂的主要原因。
When transporting, many secondary electrons can be generated from the target and the drift space under the bombardment of deuterons. The electrons entering the accelerating tube can seriously influence the load capacity and breakdown characteristics of the accelerating tube. 在束流传输过程中,束流与靶和漂移空间的相互作用会产生大量的二次电子,二次电子抑制装置用于阻止二次电子进入加速管影响加速管的负载能力和击穿特性。
A micro channel plate ( MCP), which is a fused array of hollow glass tubes coated with a secondary emitter. The MCP accepts electrons and produces additional electrons through a secondary-emission process, thus amplifying the incoming signal. 微通道板是一种内部具有二次电子发射能力材料的中空玻璃纤维阵列,它接受入射电子并通过二次电子发射产生电子倍增,从而达到放大输入电流的功能。